GaN Epitaxy with PA-MBE on HF Cleaned Cobalt-silicide Buffer Layer
نویسندگان
چکیده
منابع مشابه
Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
a Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan b Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan c Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA d Department of Electrophysics, National Chiao Tung University, 1...
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ژورنال
عنوان ژورنال: Journal of the Korea Academia-Industrial cooperation Society
سال: 2010
ISSN: 1975-4701
DOI: 10.5762/kais.2010.11.2.409